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1. product pro?le 1.1 general description high-voltage, high-speed planar-passivated npn power switching transistor in a sot428 (d-pak) surface mounted package. 1.2 features 1.3 applications 1.4 quick reference data 2. pinning information [1] it is not possible to make a connection to pin 2 of the sot428 (d-pak) package. BUJ105AD silicon diffused power transistor rev. 01 14 december 2004 product data sheet n low thermal resistance n fast switching n electronic lighting ballast n dc-to-dc converters n inverters n motor control systems n v cesm 700 v n i c 8 a n p tot 80 w n h fesat = 11 (typ) table 1: pinning pin description simpli?ed outline symbol 1 base sot428 (d-pak) 2 collector [1] 3 emitter mb mounting base; connected to collector 3 2 mb 1 sym056 2 3 1
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 2 of 12 philips semiconductors BUJ105AD silicon diffused power transistor 3. ordering information 4. limiting values table 2: ordering information type number package name description version BUJ105AD d-pak plastic single-ended surface mounted package; 3 leads (one lead cropped) sot428 table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cesm peak collector-emitter voltage v be = 0 v - 700 v v ceo collector-emitter voltage open base - 400 v v cbo collector-base voltage open emitter - 700 v i c collector current (dc) - 8 a i cm peak collector current - 16 a i b base current (dc) - 4 a i bm peak base current - 8 a p tot total power dissipation t mb = 25 c; see figure 1 -80w t stg storage temperature - 65 +150 c t j junction temperature - 150 c fig 1. normalized total power dissipation as a function of mounting base temperature t mb ( c) 0 160 120 40 80 001aab993 40 80 120 p der (%) 0 p der % () p tot p tot 25 c () ------------------------ - 100 % =
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 3 of 12 philips semiconductors BUJ105AD silicon diffused power transistor 5. thermal characteristics [1] device mounted on a printed-circuit board; minimum footprint 6. characteristics table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 2 - - 1.56 k/w r th(j-a) thermal resistance from junction to ambient [1] - 75 - k/w fig 2. transient thermal impedance from junction to mounting base as a function of pulse duration 001aab998 t p (s) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 1 10 - 1 10 z th(j-mb) (k/w) 10 - 2 d = 0.5 0.2 0.1 t p t p t p tot t t d = 0.01 0.05 0.02 table 5: characteristics t mb = 25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit static characteristics i ces collector-emitter cut-off current v be = 0 v; v ce = v cesmmax [1] - - 0.2 ma v be = 0 v; v ce = v cesmmax ; t j = 125 c [1] - - 0.5 ma i cbo collector-base cut-off current v be = 0 v; v ce = v cesmmax [1] - - 0.2 ma i ceo collector-emitter cut-off current v ceo = v ceommax = 400 v [1] - - 0.1 ma i ebo emitter-base cut-off current v eb = 9 v; i c = 0 a - - 1 ma v ceosus collector-emitter sustaining voltage i b = 0 a; i c = 10 ma; l = 25 mh; see figure 3 and 4 400 - - v v cesat collector-emitter saturation voltage i c = 4.0 a; i b = 0.8 a; see figure 11 - 0.3 1.0 v v besat base-emitter saturation voltage i c = 4.0 a; i b = 0.8 a; see figure 12 - 1.0 1.5 v h fe dc current gain i c = 1 ma; v ce = 5 v 10 14 34 i c = 500 ma; v ce = 5 v; see figure 10 13 23 36 h fesat dc saturation current gain i c = 4.0 a; v ce = 5 v 8 11 15
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 4 of 12 philips semiconductors BUJ105AD silicon diffused power transistor [1] measured with half sine-wave voltage (curve tracer). dynamic characteristics switching times (resistive load); see figure 5 and 6 t on turn-on time i con = 5 a; i bon = - i boff = 1 a; r l =75 w - 0.65 1 m s t stg storage time - 1.8 2.5 m s t f fall time - 0.3 0.5 m s switching times (inductive load); see figure 7 and 8 t stg storage time i con = 5 a; i bon = 1 a; l b =1 m h; v bb = - 5v - 1.2 1.7 m s t f fall time - 2050ns switching times (inductive load); see figure 7 and 8 t stg storage time i con = 5 a; i bon = 1 a; l b = 1 m h; v bb = - 5 v; t j = 100 c - 1.4 1.9 m s t f fall time - 25 100 ns table 5: characteristics continued t mb = 25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit fig 3. test circuit for collector-emitter sustaining voltage fig 4. oscilloscope display for collector-emitter sustaining voltage test waveform 001aab987 horizontal 1 w 300 w 6 v vertical oscilloscope 50 v 100 w to 200 w 30 hz to 60 hz 001aab988 v ce (v) min v ceosus i c (ma) 10 100 250 0
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 5 of 12 philips semiconductors BUJ105AD silicon diffused power transistor v im = - 6 v to +8 v; v cc = 250 v; t p = 20 m s; d =t p /t = 0.01. r b and r l calculated from i con and i bon requirements. fig 5. test circuit for resistive load switching fig 6. switching times waveforms for resistive load v cc = 300 v; v bb = - 5 v; l c = 200 m h; l b = 1 m h. fig 7. test circuit for inductive load switching fig 8. switching times waveforms for inductive load 001aab989 t p r b v im 0 r l dut v cc t 001aab990 i c i b 10 % 10 % 90 % 90 % t on t off t stg t f t t i bon - i boff i con t r 30 ns 001aab991 v cc l c dut l b i bon v bb 001aab992 i c i b 90 % t off i bon t stg t f t t - i boff i con 10 %
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 6 of 12 philips semiconductors BUJ105AD silicon diffused power transistor fig 9. dc current gain as a function of collector current; typical values at v ce = 1 v fig 10. dc current gain as a function of collector current; typical values at v ce = 5 v t j = 25 c. i c /i b = 4. fig 11. collector-emitter saturation voltage as a function of base current; typical values fig 12. base-emitter saturation voltage as a function of collector current; typical values 001aac045 i c (a) 10 - 2 10 1 10 - 1 10 10 2 h fe 1 t j = 100 c 25 c - 40 c 001aac046 i c (a) 10 - 2 10 1 10 - 1 10 10 2 h fe 1 t j = 100 c 25 c - 40 c i b (a) 10 - 2 10 1 10 - 1 001aab995 0.8 1.2 0.4 1.6 2.0 v cesat (v) 0 i c = 1 a 2 a 3 a 4 a i c (a) 10 - 1 10 1 001aac047 0.9 0.7 1.1 1.3 v besat (v) 0.5 t j = - 40 c 25 c 100 c
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 7 of 12 philips semiconductors BUJ105AD silicon diffused power transistor 7. package information epoxy meets requirements of ul94 v-0 at 1 8 inch. i c /i b = 4. v ceclamp < 700 v; v cc = 150 v; v bb = - 5v, - 3 v and - 1 v; l b = 1 m h; l c = 200 m h. fig 13. collector-emitter saturation voltage as a function of collector current; typical values fig 14. test circuit for reverse bias safe operating area t j < t j(max) . fig 15. reverse bias safe operating area 001aac048 0.2 0.4 0.6 v cesat (v) 0 i c (a) 10 - 1 10 1 t j = 100 c 25 c - 40 c 001aab999 dut l c l b i bon v bb v cc v ceclamp probe point v ceclamp (v) 0 800 600 200 400 001aac049 4 6 2 8 10 i c (a) 0 v bb = - 5 v - 3 v - 1 v
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 8 of 12 philips semiconductors BUJ105AD silicon diffused power transistor 8. package outline fig 16. package outline sot428 (sc-63) references outline version european projection issue date iec jedec jeita sot428 sc-63 to-252 sot428 01-12-11 04-10-14 dimensions (mm are the original dimensions) plastic single-ended surface mounted package (d-pak); 3 leads (one lead cropped) a 2 13 e 1 d 2 d 1 h d l l 1 l 2 e 1 e mounting base wa m b e b 2 b 1 c a 1 y 0 5 10 mm scale unit mm 0.93 0.73 5.46 5.00 0.56 0.20 6.22 5.98 6.73 6.47 10.4 9.6 2.95 2.55 a 1 2.38 2.22 ab 2 1.1 0.9 b 1 e 1 0.89 0.71 bcd 1 0.9 0.5 l 2 ee 2.285 4.57 4.0 d 2 min 4.45 e 1 min 0.5 l 1 min h d lw 0.2 y max 0.2 a
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 9 of 12 philips semiconductors BUJ105AD silicon diffused power transistor 9. mounting dimensions in mm. fig 17. sot428 soldering pattern for surface mounting 001aab021 7.0 7.0 4.57 2.5 2.15 1.5
9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 10 of 12 philips semiconductors BUJ105AD silicon diffused power transistor 10. revision history table 6: revision history document id release date data sheet status change notice doc. number supersedes BUJ105AD_1 20041214 product data sheet - 9397 750 14196 -
philips semiconductors BUJ105AD silicon diffused power transistor 9397 750 14196 ? koninklijke philips electronics n.v. 2004. all rights reserved. product data sheet rev. 01 14 december 2004 11 of 12 11. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 13. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 14. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2004 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 14 december 2004 document number: 9397 750 14196 published in the netherlands philips semiconductors BUJ105AD silicon diffused power transistor 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 3 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 package information . . . . . . . . . . . . . . . . . . . . . 7 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 11 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 12 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 13 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 14 contact information . . . . . . . . . . . . . . . . . . . . 11

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